Breakthrough Results in Laser Temperature Stability
Nanosemiconductor GmbH, an advanced facility for growth of nano-epitaxy wafers for semiconductor lasers, announced results achieved by Prof Bhattacharya’s group of the University of Michigan which demonstrates complete temperature stability of key parameters over the temperature range 0-80C for 1.3 micron edge-emitting semiconductor lasers.
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April 26, 2004
Nanosemiconductor GmbH, an advanced facility for growth of nano-epitaxy wafers for semiconductor lasers, announced results achieved by Prof Bhattacharya’s group of the University of Michigan which demonstrates complete temperature stability of key parameters over the temperature range 0-80C for 1.3 micron edge-emitting semiconductor lasers.
See pdf for full text version!
