Wafers for Microelectronics
Innolume provides epitaxy services to electronics applications. Being equipped with two production level MBE machines, we focus on the growth of HEMT structures, offering customer specific growth on 3” and 4” GaAs substrates.
Typical parameters of pHEMT structures are:
µ = 6000 cm2/Vs
n = 2x1012 cm-2
