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Innolume ramps up production to meet growing demand

Innolume GmbH Expands Quantum Dot Laser Diode Production to Meet Growing Connectivity Demands

Dortmund, Germany – January 15, 2024 – Innolume GmbH, a leading innovator and manufacturer of GaAs based Quantum Dot lasers, announces a substantial expansion of its production capacity to address the surging demand for O-band CW lasers and SOAs  in several markets including AI-driven connectivity. For example, according to LightCounting Market Research, shipments of 800+ Gbps Optical Transceivers are expected to nearly double annually over the next five years, driven by the rapid expansion of hyperscale data centers.

To meet this escalating demand and solidify its leadership position, Innolume has placed Purchasing Orders for Riber CPS 442 laser facet passivation machine and Riber 49 MBE system to expand its existing MBE fleet. This investment is a part of the overall on-going investment program to ramp up Innolume’s manufacturing capacities.

The Quantum Dot DFB lasers produced by Innolume are known for their high power, superior reliability, efficient operation at elevated temperatures and ability to work with Silicon Photonics PICs without Optical Isolator, making them the preferred choice for Cloud Networking Systems navigating the complexities of next-generation connectivity.


About Innolume GmbH

Innolume GmbH is a vertically integrated laser diode fab located in Dortmund, Germany, specializing in Quantum Well and Quantum Dot laser diodes based on InGaAs/GaAs material systems. With over 20 years of experience, Innolume serves various market segments, including Datacom, LiDAR and sensing, Industrial, and Scientific applications. The company boasts a customer base of over 100 clients worldwide.

Innolume is a trademark of Innolume GmbH. Other trademarks are the property of their respective owners.


Come visit us at Photonics West at Booth 4239

Come visit us at OFC at Booth 5251

Innolume GmbH
Sven Rueger

Nobel Prize in Chemistry 2023

Nobel Prize in Chemistry 2023

Being one of a few manufacturers of diode lasers based on semiconductor Quantum Dots, Innolume is excited to learn that the Nobel Prize in Chemistry 2023 was awarded to Moungi Bawendi, Louis Brus and Alexei Ekimov for the discovery and development of quantum dots. The first quantum dots based on II-VI semiconductor microcrystals in a glass matrix were proposed and demonstrated by Alexei Ekimov and A. Onushchenko in 1981 (JETP Lett.) while working at the Ioffe Institute and the Vavilov State Optical Institute In St.Petersburg.

These semiconductor quantum dots were introduced in an insulating glass matrix, which  prohibited direct current pumping. In 1985 L.Goldshtein observed spontaneous formation of three-dimensional islands during the epitaxial growth of InAs/GaAs superlattice (L.Goldshtein et al, Appl.Phys.Lett). In the beginning of 90’s many research organizations around the world started active research on how to form ideal InGaAs QDs in GaAs matrix in order to develop a new class of diode lasers. The collaboration between the group of Prof. Zhores Alferov (Nobel Prize in Physics 2000 for invention of semiconductor heterostructures and demonstration of first diode laser operating at room temperature) which developed MBE growth of QDs at Ioffe Institute and the group of Prof. Dieter Bimberg (UNESCO Medal for Progress in Nanotechnologies and Nanosciences 2012) at Technical University of Berlin led to demonstration of the first QD laser in 1993 (Kirstaedter et al, Elect.Lett, 1994).

Colloidal QDs for displays

InAs/GaAs QDs for diode lasers

Innolume was founded in Dortmund, Germany in 2003 as a spin-off from Zhores Alferov’s laboratory and started commercialization of QD photonics components such as Fabry-Perrot and DFB lasers, Semiconductor Optical Amplifiers, arrays, gain chips, as well as continued  intensive research work. In 2007 Innolume demonstrated the first semiconductor frequency comb laser with stable performance and 10 Gbps error free signal transmission on each of ten lasing lines (A.Gubenko et al, El.Lett). A proper QD gain media was the key to have stable multiple wavelength operation.

Today Innolume serves more than 100 customers worldwide offering laser diodes with superior performance compared to conventional Quantum Well lasers, including such parameters as uncooled operation at 110℃ with high efficiency, high power, low noise, narrow lasing linewidth, reduced sensitivity to back reflection, stable multiple lasing wavelength (combs), and finally significantly enhanced reliability. In combination with well established cost effective high volume manufacturing of GaAs devices, all these parameters dictate massive penetration of InAs/GaAs QD photonics components into Cloud Networking, AI/ML clusters, LiDARs and other markets.

New SLD at 830nm with 50mW output!

New SLD in our product portfolio!

Innolume introduces new superluminescent light emitting diode at short wavelength of 830nm.

This SLD provides 50mW ex fiber and it’s a perfect component for OCT, sensors and spectroscopy applications.

You can review the preliminary specification of SLD-830-10-YY-50 and contact us to share your project details – we are offering customized solutions!

Pump lasers for Bismuth Doped Fiber Amplifiers (BDFA)

Pump lasers for BDFA in our product portfolio!

Exciting news from Innolume! The company launched the production of pump lasers for Bismuth Doped Fiber Amplifiers (BDFA) with an impressive power output of 500mW. These cutting-edge lasers operate at a wavelength of 1190 nm and are based on Innolume’s GaAs quantum dot technology, which offers exceptional reliability and power levels.

BDFA technology has been around since the 2000s, but it’s only recently become practical thanks to the availability of cost-efficient Bismuth doped fiber and high-power quantum dot pump lasers offered by Innolume. BDFAs have the potential to significantly extend the reach of O band transmission to 80km spans, which could replace C band fiber links with O band links. This is great news for companies looking to increase the bandwidth of their existing fiber links.

DFBs with optical isolators to enhance stable operation!

New DFB-VO in our product portfolio!

Innolume`s Distributed Feedback Lasers are now available with built-in optical isolators to enhance stable operation of laser.

This is an option for fiber coupled DFB modules in 1020-1330nm wavelength range.

Any wavelength is possible with just 1nm step tolerance. Our DFBs are suitable for seeding application and usage in DWDM systems.

Review the new specifications in DFB product section and contact us for the details!

Our Postdeadline Paper presentation at OFC 2023!

Our Postdeadline Paper presentation at OFC 2023!

We are glad to announce, that our paper “High-performance O-band QD DFB laser for uncooled operation” has been sessioned by the Technical Program Committee for a Postdeadline Paper presentation  at the OFC 2023 meeting which is scheduled from 05-09 March 2023.

OFC 2023 will be a hybrid meeting. Technical sessions will be presented live from the Pacific Daylight Time Zone (PST, UTC -08:00) with a recorded archive available later for on-demand viewing.

Paper Information
Control Number: 3903651
Paper Title: High-performance O-band QD DFB laser for uncooled operation
Author block: Vladimir Mikhrin(1); Artem Zhabotinskii(1); Mikhail Buyalo(1); Sergei Poltavtsev(1); Sergey Mikhrin(1); Alexey Gubenko(1) and Alexey Kovsh(2); 1. Innolume GmbH., Dortmund, Germany. 2. Alfalume, Los Gatos, CA, United States.

Presentation Information
Presenting Author: Alexey Kovsh
Presentation ID: Th4A.1
Presentation Time: 4:30 PM to 4:45 PM Pacific Time
Session Abbreviation: Th4A
Session Title: Postdeadline Paper Session I
Session Time and Dates: March 9, 2023 from 4:30 PM to 6:30 PM Pacific Time
Session Location: Room 6C

Our partner Alfalume announces availability of 1.3 μm high power uncooled QD Lasers

Alfalume Inc. in partnership with Innolume GmbH, today announces sample availability of its O-band high power InAs/GaAs Quantum Dot DFB lasers which offers best-in-class output power, wall plug efficiency, temperature range as well as fundamentally better reliability of QD lasers compared to QW counterparts.

The Aflalume QD lasers provide significant benefits for high speed datacom transceivers, including record high power and conversion efficiency at temperatures above 85℃ without requiring thermoelectric coolers, optical isolator free operation, and lower cost due to significantly reduced component costs and better assembly yields.

“Our QD laser technology matches the operation temperature of photonics to the highest operating temperature of modern electronics. There is no other technology today which can provide the power level of O-band DFB lasers above 200mW with power efficiency of 20% at 105°C with the ability to operate efficiently up to 150°C” said Alexey Kovsh, Alfalume CEO. “Our uncooled lasers are ideal for pluggable transceivers offering the highest efficiency at high temperatures”.

QD DFB lasers offer the following performance characteristics: 

For 800G/1600G-DR8, a single QD laser can be used for all eight channels, resulting in lower component counts, better assembly yield and lower cost optical transceivers. QD Lasers are ideal for both Silicon Photonics and all new EO Modulation technologies including TFLN and BTO/Si. In addition QD Lasers are ideal for Remote Laser Modules for CPO and LIDAR applications. 

“The power of a single Innolume laser allows us to have a significant power margin for our DR8 Lithium Niobate modulators ‘, said Xinlun Cai, Liobate CEO.  “This enables better manufacturing yield and lower cost transceivers.”

About Alfalume Inc.

Alfalume in partnership with Innolume GmbH to develop and bring to market leading edge quantum-dot laser solutions for datacom, LIDAR and other applications. Together the two companies have more than 100 customers worldwide.  

Alfalume is a trademark of Alfalume Inc.. Innolume is a trademark of Innolume GmbH.  Other trademarks are the property of their respective owners.