Broad-area laser diode at 1064nm on submount
Broad-area laser diode at 1064nm on submount
BAE1064004CC008WXXXX
Mean wavelength: 1064 nm
Mesa width: 130 um
Output power: 8 W
Forward current: 10 A
Forward voltage: 1.5 V
Threshold current: 0.5 A
Spectrum bandwidth (3dB): 4 nm
Slow axis beam divergence: 7 deg
Fast axis beam divergence: 35 deg
Package: Chip-on-carrier
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applications
- 生命科学与医疗