Broad-area laser diode at 1120nm on submount
Broad-area laser diode at 1120nm on submount

Broad-area laser diode at 1120nm on submount

BAE1120004CC008WXXXX
Mean wavelength:  1120 nm
Mesa width:  130 um
Output power:  8 W
Forward current:  11 A
Forward voltage:  1.4 V
Threshold current:  1 A
Spectrum bandwidth (3dB):  4 nm
Slow axis beam divergence:  7 deg
Fast axis beam divergence:  36 deg
Package:  Chip-on-carrier
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applications
  • 生命科学与医疗