Broad-area laser diode at 1150nm on submount
Broad-area laser diode at 1150nm on submount

Broad-area laser diode at 1150nm on submount

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Mean wavelength:  1150 nm
Mesa width:  90 um
Output power:  4 W
Forward current:  8 A
Forward voltage:  1.4 V
Threshold current:  0.4 A
Spectrum bandwidth (3dB):  10 nm
Slow axis beam divergence:  8 deg
Fast axis beam divergence:  40 deg
Package:  Chip-on-carrier
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