Broad-area laser diode at 1150nm on submount
Broad-area laser diode at 1150nm on submount
BAD1150010CC004WXXXX
Mean wavelength: 1150 nm
Mesa width: 90 um
Output power: 4 W
Forward current: 8 A
Forward voltage: 1.4 V
Threshold current: 0.4 A
Spectrum bandwidth (3dB): 10 nm
Slow axis beam divergence: 8 deg
Fast axis beam divergence: 40 deg
Package: Chip-on-carrier
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