Broad-area laser diode at 1160nm on submount
Broad-area laser diode at 1160nm on submount

Broad-area laser diode at 1160nm on submount

BAH1160010CC007WXXXX
Mean wavelength:  1160 nm
Mesa width:  250 um
Output power:  7 W
Forward current:  14 A
Forward voltage:  1.4 V
Threshold current:  1 A
Spectrum bandwidth (3dB):  10 nm
Slow axis beam divergence:  10 deg
Fast axis beam divergence:  40 deg
Package:  Chip-on-carrier
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