Broad-area laser diode at 1190nm on submount
Broad-area laser diode at 1190nm on submount
BAH1190010CC006WXXXX
Mean wavelength: 1190 nm
Mesa width: 250 um
Output power: 6 W
Forward current: 14 A
Forward voltage: 1.5 V
Threshold current: 1.1 A
Spectrum bandwidth (3dB): 10 nm
Slow axis beam divergence: 8 deg
Fast axis beam divergence: 40 deg
Package: Chip-on-carrier
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