Broad-area laser diode at 1210nm on submount
Broad-area laser diode at 1210nm on submount
BAE1210010CC005WXXXX
Mean wavelength: 1210 nm
Mesa width: 130 um
Output power: 5 W
Forward current: 9.5 A
Forward voltage: 1.4 V
Threshold current: 0.6 A
Spectrum bandwidth (3dB): 10 nm
Slow axis beam divergence: 8 deg
Fast axis beam divergence: 33 deg
Package: Chip-on-carrier
加入购物车
applications
- 生命科学与医疗
- 医疗美容