Broad-area laser diode at 1210nm on submount
Broad-area laser diode at 1210nm on submount
BAH1210010CC009WXXXX
Mean wavelength: 1210 nm
Mesa width: 250 um
Output power: 9 W
Forward current: 17 A
Forward voltage: 1.4 V
Threshold current: 1 A
Spectrum bandwidth (3dB): 10 nm
Slow axis beam divergence: 9 deg
Fast axis beam divergence: 27 deg
Package: Chip-on-carrier
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applications
- 生命科学与医疗
- 医疗美容