11 March 2019
Innolume GmbH in consortium CALADAN
In frames of “Horizon 2020”, Innolume GmbH in consortium with world leading European research institutes, large enterprises and SMEs was granted with a project focused on integration of high-speed SiGe BiCMOS electronics and GaAs quantum laser chiplets onto Silicon Photonics wafers.
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Introducing a new high-power 1260 nm amplifier
The new BOA1260050YY400MXXXX amplifier at 1260 nm delivers over 400 mW output power, 35 dB gain, and a 6.5 dB noise figure. Designed for O-band telecommunications and Rydberg atom experiments, it offers high reliability and compatibility with Innolume DFB lasers
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Advancing the Amplifier Wavelength Frontier to 1350 nm
Innolume extends its amplifier wavelength range to 1350 nm with the new SOA1340025YY22DBXXXX. Delivering over 20 dB gain and 15 dBm output power, it combines GaAs QD technology and spectral stability for advanced optical systems across the extended O-band.
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Innolume expands O-Band portfolio with a new WDM SOA
Innolume expands its O-band lineup by introducing the new semiconductor optical amplifier SOA1310025YY12DBXXXX with a wavelength of 1310 nm. With an output power of up to 150 mW, saturation level above 20 dBm, and a typical noise figure of 5.5 dB, this SOA ensures high-precision signal amplification for WDM systems and high-speed data communication.
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