Innolume expands production facilities and prepares for installation of two new MBE6000 reactors

Innolume is expanding its manufacturing platform to support the growing demand for advanced photonic devices. The expansion includes the development of new laboratory and production areas, as well as additional cleanroom facilities dedicated to epitaxial growth processes. The upgraded infrastructure will enable the fabrication of Quantum Dot photonic devices on 6-inch GaAs wafers, further strengthening Innolume’s path toward high-volume manufacturing of next-generation photonic components.

Innolume’s current epitaxial production is based on two Riber MBE49 molecular beam epitaxy reactors, which are used for the growth of III–V semiconductor materials for optoelectronic devices and form the foundation of the company’s existing epitaxial manufacturing capacity. As part of the expansion, the company plans to install two Riber MBE6000 molecular beam epitaxy reactors, designed for large-scale epitaxial wafer production. The MBE6000 platform supports simultaneous growth on multiple 6-inch GaAs wafers per run, significantly increasing epitaxial throughput and enabling scalable manufacturing. Installation and commissioning of the new reactors are scheduled for Q4 2026.

This investment represents a major step in scaling Innolume’s epitaxial manufacturing capacity and preparing the company for high-volume production of Quantum Dot photonic devices.

The expansion is driven by rapidly growing demand for high-performance CW DFB lasers, single-mode lasers, high-power SOAs, WDM SOAs, and comb lasers based on Quantum Dot technology, across applications including optical interconnects for AI data centers and LiDAR systems. It will also support rapidly growing Innolume’s product portfolio based on GaAs quantum well devices.