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1150 nm Diode

1150 nm Diode

  • Broad-area lasers (Chip-on-carrier) (1)
  • Gain-chips (TO package) (1)
  • Broad-area lasers (C-mount) (1)
  • Optical Isolators (2)
Broad-area laser diode at 1150nm on submount
Broad-area laser diode at 1150nm on submount
BAD1150010CC004WXXXX
PDF
Mean wavelength:  1150nm
Mesa width:  90um
Output power:  4W
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Gain-chip 230mW at 1160nm in TO package
Gain-chip 230mW at 1160nm in TO package
GCA1160090TC200MXXXX
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Wavelength of maximum power:  1160nm
Tuning range width:  90nm
Maximal Output Power:  230mW
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Broad-area laser diode at 1150nm on C-mount
Broad-area laser diode at 1150nm on C-mount
BAD1150010CM004WXXXX
PDF
Mean wavelength:  1150nm
Mesa width:  90um
Output power:  4W
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PM fiber-coupled optical isolator at 1150nm
PM fiber-coupled optical isolator at 1150nm
OIS1150000PM20DBXXXX
Stage:  single
Peak wavelength:  1150nm
Peak isolation:  20dB
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PM fiber-coupled optical isolator at 1150nm
PM fiber-coupled optical isolator at 1150nm
OID1150000PM30DBXXXX
Stage:  double
Peak wavelength:  1150nm
Peak isolation:  30dB
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